Trinity Material announced on May 7 that sapphire grown in ARC Energy's controlled heat extraction system (CHES) crystal growth furnace has been certified and used by two leading LED chip companies for high quality production. LED chip. Tongren Electronics will work with ARC Energy to produce sapphire using ARC Energy's CHES crystal growth furnace.
According to ARC Energy's CHES method, sapphire ingots grow directly in the c direction. In the traditional process, sapphire is grown in a direction and c is taken from a bar. Champion Yi, Chief Operating Officer of Tongren Electronics, said: "The certification results of LED chips show that the performance of CHES wafers can reach the same or higher level than the wafers produced by the a-growth process, and there is no color at the ingot or wafer level. Problem: Compared to wafers fabricated using the traditional a-growth process, the light output of LED chips fabricated using CHES wafers has increased significantly."
Tongren Electronics and ARC Energy paved the way for the LED industry to adopt new industry expectations and opportunities for growth sapphire. Tongren Electronics is successfully accelerating the mass production of sapphire crystals to meet the growing demand for large diameter sapphire substrates in the LED market.
Tongren Electronics CEO Sheng Jianming said that he hopes to continue to strengthen the cooperation with ARC Energy, using ARC Energy's leading CHES crystal growth furnace and the company's own production capacity to accelerate mass production and become the world's leading large-diameter sapphire production. the company.
ARC Energy's proprietary fully automated CHES technology produces c-direction ingots that are best suited for LED applications. Compared to traditional a-axis growth technology, it can increase material utilization and reduce total cost for large-diameter sapphire production. Dr. Rick Schwerdtfeger, co-founder and CTO of ARC Energy, said that with the company's unique flexible c-axis CHES crystal growth furnace, the same electronics can meet the rapidly growing demand for 4" to 8" large diameter sapphire substrates.
According to ARC Energy's CHES method, sapphire ingots grow directly in the c direction. In the traditional process, sapphire is grown in a direction and c is taken from a bar. Champion Yi, Chief Operating Officer of Tongren Electronics, said: "The certification results of LED chips show that the performance of CHES wafers can reach the same or higher level than the wafers produced by the a-growth process, and there is no color at the ingot or wafer level. Problem: Compared to wafers fabricated using the traditional a-growth process, the light output of LED chips fabricated using CHES wafers has increased significantly."
Tongren Electronics and ARC Energy paved the way for the LED industry to adopt new industry expectations and opportunities for growth sapphire. Tongren Electronics is successfully accelerating the mass production of sapphire crystals to meet the growing demand for large diameter sapphire substrates in the LED market.
Tongren Electronics CEO Sheng Jianming said that he hopes to continue to strengthen the cooperation with ARC Energy, using ARC Energy's leading CHES crystal growth furnace and the company's own production capacity to accelerate mass production and become the world's leading large-diameter sapphire production. the company.
ARC Energy's proprietary fully automated CHES technology produces c-direction ingots that are best suited for LED applications. Compared to traditional a-axis growth technology, it can increase material utilization and reduce total cost for large-diameter sapphire production. Dr. Rick Schwerdtfeger, co-founder and CTO of ARC Energy, said that with the company's unique flexible c-axis CHES crystal growth furnace, the same electronics can meet the rapidly growing demand for 4" to 8" large diameter sapphire substrates.
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